TLE2142IDR

Product Summary

The TLE2142IDR device is a high-performance, internally compensated operational amplifier built using Texas Instruments complementary bipolar Excalibur process. The TLE2142IDRA is a tighter offset voltage grade of the TLE2142IDR. Both are pin-compatible upgrades to standard industry products. The design incorporates an input stage that simultaneously achieves low audio-band noise of 10.5 nV/√Hz with a 10-Hz 1/f corner and symmetrical 40-V/μs slew rate typically with loads up to 800 pF. The resulting low distortion and high power bandwidth are important in high-fidelity audio applications. A fast settling time of 340 ns to 0.1% of a 10-V step with a 2-kΩ/100-pF load is useful in fast actuator/positioning drivers. Under similar test conditions, settling time to 0.01% is 400 ns. The devices are stable with capacitive loads up to 10 nF, although the 6-MHz bandwidth decreases to 1.8 MHz at this high loading level. As such, the TLE2142IDR and TLE2142IDRA are useful for low-droop sample-and-holds and direct buffering of long cables, including 4-mA to 20-mA current loops.

Parametrics

TLE2142IDR absolute maximum ratings: (1)Supply voltage, VCC+: 22 V; (2)Supply voltage, VCC: 22 V; (3)Differential input voltage, VID: ± 44 V; (4)Input voltage range, VI: VCC+ to VCC. . 0.3 V; (5)Input current, II: ±1 mA; (6)Output current, IO: ±80 mA; (7)Total current into VCC+: 80 mA; (8)Total current out of VCC: 80 mA; (9)Storage temperature range: -65℃ to 150℃; (10)Case temperature for 60 seconds: FK package: 260℃; (11)Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds: D, DW, N, P, or PW package: 260℃; (12)Lead temperature 1,6 mm (1/16 inch) from case for 60 seconds: J or JG package: 300℃.

Features

TLE2142IDR features: (1)Low Noise: 10 Hz, 15 nV/√Hz; 1 kHz, 10.5 nV/√Hz; (2)10000-pF Load Capability; (3)20-mA Min Short-Circuit Output Current; (4)27-V/μs Min Slew Rate; (5)High Gain-Bandwidth Product: 5.9 MHz; (6)Low VIO: 500 μV Max at 25℃; (7)Single or Split Supply:4 V to 44 V; (8)Fast Settling Time: 340 ns to 0.1%, 400 ns to 0.01%; (9)Saturation Recovery: 150 ns.

Diagrams